(China (Mainland))
Product Summary
Offered in 1G x 8bit, the K9WBG08U1M-PCBO is an 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9WBG08U1M-PCBO extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9WBG08U1M-PCBO is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.
Parametrics
K9WBG08U1M-PCBO absolute maximum ratings: (1)Voltage on any pin relative to VSS VCC -0.6 to +4.6V; (2)Voltage on any pin relative to VSS VIN -0.6 to +4.6 V; (3)Voltage on any pin relative to VSS VI/O -0.6 to Vcc+0.3 (<4.6V)V; (4)Temperature Under Bias TBIAS: -10 to +125 ℃; (5)Storage Temperature TSTG: -65 to +150 ℃; (6)Short Circuit Current IOS: 5 mA.
Features
K9WBG08U1M-PCBO features: (1)Voltage Supply 2.70V ~ 3.60V; (2)Organization Memory Cell Array : (1G + 32M)x 8bit, Data Register : (2K + 64)x 8bit; (3)Automatic Program and Erase Page Program : (2K + 64)Byte, Block Erase : (128K + 4K)Byte; (4)Fast Write Cycle Time Page Program time : 200μs(Typ.), Block Erase Time : 1.5ms(Typ.); (5)Command/Address/Data Multiplexed I/O Port; (6)Hardware Data Protection Program/Erase Lockout During Power Transitions; (7)Reliable CMOS Floating-Gate Technology Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC), Data Retention : 10 Years; (8)Command Driven Operation; (9)Intelligent Copy-Back with internal 1bit/528Byte EDC; (10)Unique ID for Copyright Protection.
Diagrams
