(China (Mainland))
Product Summary
The FM16W08-SGTR is a 64Kb Wide Voltage Bytewide F-RAM employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory. In-system operation of the FM16W08-SGTR is very similar to other RAM devices. Minimum read- and writecycle times are equal. The F-RAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM16W08-SGTR is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the disadvantages associated with modules and batteries or hybrid memory solutions.
Parametrics
FM16W08-SGTR absolute maximum ratings: (1)VDD Power Supply Voltage with respect to VSS: -1.0V to +7.0V; (2)VIN Voltage on any pin with respect to VSS: -1.0V to +7.0V; (3)TSTG Storage Temperature: -55℃ to + 125℃; (4)TLEAD Lead Temperature (Soldering, 10 seconds): 260° C; (5)VESD Electrostatic Discharge Voltage Human Body Model (AEC-Q100-002 Rev. E): 4kV.
Features
FM16W08-SGTR features: (1)Organized as 8,192 x 8 bits; (2)High Endurance 100 Trillion (1014)Read/Writes; (3)38 year Data Retention (@ +75C); (4)NoDelay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)No Battery Concerns; (7)Monolithic Reliability; (8)True Surface Mount Solution, No Rework Steps; (9)Superior for Moisture, Shock, and Vibration; (10)Resistant to Negative Voltage Undershoot; (11)JEDEC 8Kx8 SRAM & EEPROM pinout; (12)70 ns Access Time; (13)130 ns Cycle Time; (14)Wide Voltage Operation 2.7V to 5.5V; (15)12 mA Active Current; (16)20 μA (typ.)Standby Current; (17)Industrial Temperature -40° C to +85° C.
Diagrams
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Ramtron |
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